Publication | Closed Access
1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding
23
Citations
0
References
2014
Year
Unknown Venue
Electrical EngineeringEngineeringBi-directional Silicon Dmos-igbtAdvanced Packaging (Semiconductors)Hydrophobic Bonding ProcessTransparent JunctionApplied PhysicsFusion Wafer BondingSemiconductor Device FabricationIntegrated CircuitsSilicon On InsulatorMicroelectronicsInterconnect (Integrated Circuits)Semiconductor Device
A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400°C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.