physica status solidi (a) · 2007 · 29 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsMos CapacitorsSemiconductor Device MaterialsSemiconductor InterfacesWide-bandgap Semiconductor DevicesConductionConduction BandGallium Nitride (Gan) MaterialsGate Oxide InterfacesInterface DensityInterface Quality Assurance
Abstract The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO 2 deposition. The interface state density ( D it ) of samples annealed at 900–1000 °C was estimated to be ∼2 × 10 11 cm –2 eV –1 at 0.2 eV under the conduction band based on the calculation of the Terman method. Using this SiO 2 , it is expected that GaN MOSFETs can be operated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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