High‐quality SiO₂/GaN interface for enhanced operation field‐effect transistor

Abstract

Abstract The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO 2 deposition. The interface state density ( D it ) of samples annealed at 900–1000 °C was estimated to be ∼2 × 10 11 cm –2 eV –1 at 0.2 eV under the conduction band based on the calculation of the Terman method. Using this SiO 2 , it is expected that GaN MOSFETs can be operated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)