Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model

Abstract

The authors investigated the resistive switching of transition metal oxide (TMO) junctions by applying a short voltage pulse and found that the response time of the “reset” process was dependent on the resistance in the low resistive state. By using a thermal conductive equation to calculate the temperature of the filamentary conductive path in the TMO film, the temperature in the reset process was estimated to reach the same temperature grade in each reset. On this basis, the previous experimental relation is well explained by assuming a general thermal chemical reaction model for the reset process.