Applied Physics Letters · 2006 · 116 citations · 5 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsMetal-semiconductor ContactsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsContact ResistanceOxide Memristive MaterialsResistive SwitchingSemiconductor Oxide Thin FilmsSwitching BehaviorSwitching DevicesThin Oxide FilmsVoltage
The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07μm2) was studied as a function of pulse voltage. For off→on switching at least 2V was necessary and the minimum switching times were ∼20ns at 2V and ∼10ns at 3V. For on→off switching, a minimum switching time of 5μs was obtained at 2.5V. The resistance of the on-state device was also dependent on the switching voltage and time.
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