Concepedia

Tsuguo Inata

TI

22

Publications

1.1K

Citations

17

H-Index

1984

Active since

Affiliations

Fujitsu (Japan)(Current)

Tsuguo Inata is an author at Fujitsu (Japan) specializing in applied physics, engineering, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsOptoelectronicsElectrical EngineeringCondensed Matter PhysicsQuantum MaterialsSemiconductorsQuantum SciencePhotonics

Publications per year

1984–1995

22

Publications

22

Self-consistent analysis of resonant tunneling current

H. Ohnìshì, Tsuguo Inata, Shunichi Muto et al. · Applied Physics Letters · 1986 · 161 citations

Device Modeling, Quantum Science, Electrical Engineering +14

Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity

Atsushi Tackeuchi, Shunichi Muto, Tsuguo Inata et al. · Applied Physics Letters · 1990 · 116 citations

Engineering, Spin Relaxation Time, Magnetic Resonance +16

A Pseudomorphic In<sub>0.53</sub>Ga<sub>0.47</sub>As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature

Tsuguo Inata, Shunichi Muto, Yoshiaki Nakata et al. · Japanese Journal of Applied Physics · 1987 · 108 citations

Materials Science, Room Temperature, Wide-bandgap Semiconductor +14

Conduction Band Edge Discontinuity of In<sub>0.52</sub>Ga<sub>0.48</sub>As/In<sub>0.52</sub>(Ga<sub>1-x</sub>Al<sub>x</sub>)<sub>0.48</sub>As(0≦x≦1) Heterostructures

Yoshihiro Sugiyama, Tsuguo Inata, Toshio Fujii et al. · Japanese Journal of Applied Physics · 1986 · 89 citations

Semiconductors, Materials Science, Electrical Engineering +13

Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE

Shunichi Muto, Tsuguo Inata, H. Ohnìshì et al. · Japanese Journal of Applied Physics · 1986 · 85 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

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