Japanese Journal of Applied Physics · 1985 · 265 citations · 6 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsQuantum TunnelingQuantum Well DevicesQuantum WellsCarrier Tunneling Across InterfacesElectron TunnelingQuantum Tunneling EffectsResonant TunnelingResonant Tunneling DevicesTunneling CurrentTunneling In Quantum Well StructuresTunneling In Semiconductors
Abstract-A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.
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Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
Resonant tunneling through quantum wells at frequencies up to 2.5 THz
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald et al. · Applied Physics Letters · 1983 · 1.1K citations · Full text