A. Kastalsky - Concepedia

Author

A. Kastalsky

AT&T (United States)

Also Known As

A Kastalsky, A. KASTALSKY, A. Kastalsky, A.A. Kastalsky, Alexander Kastalsky

Publications

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Core Competence IBM Research - Thomas J. Watson Research Center Nokia (United States)Stony Brook University

About

A. Kastalsky is an author at AT&T (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	35	1.8K
2	Applied Physics	23	34	1.8K
3	Health Sciences	1	1	29
4	Natural Sciences	1	1	13
5	Computer Engineering	1	1	11

A. Kastalsky

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Observation of pair currents in superconductor-semiconductor contacts A. Kastalsky, A. W. Kleinsasser, L. H. Greene, Physical Review Letters Excess Low-voltage ConductanceSuperconducting MaterialSemiconductor DeviceEngineeringPhysics	1991	307
New infrared detector on a silicon chip Serge Luryi, A. Kastalsky, J. C. Bean IEEE Transactions on Electron Devices PhotonicsNew Infrared DetectorEngineeringPhysicsInfrared Sensor	1984	183
Novel real-space hot-electron transfer devices A. Kastalsky, Serge Luryi IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringRf SemiconductorPhysics	1983	122
On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors A. Kastalsky, R.A. Kiehl IEEE Transactions on Electron Devices SemiconductorsLow-temperature DegradationElectrical EngineeringElectronic DevicesBias Stress	1986	116
Charge injection transistor based on real-space hot-electron transfer Serge Luryi, A. Kastalsky, A. C. Gossard, IEEE Transactions on Electron Devices SemiconductorsCharge Injection TransistorElectrical EngineeringElectronic DevicesEngineering	1984	107
Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction A. Kastalsky, James C. M. Hwang Solid State Communications Electrical EngineeringPersistent Photoconductivity EffectEngineeringOptical PropertiesApplied Physics	1984	94
Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice A. Kastalsky, T. Duffield, S. J. Allen, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	1988	92
Two-dimensional electron gas at a molecular beam epitaxial-grown, selectively doped, In0.53Ga0.47As-In0.48Al0.52As interface A. Kastalsky, R. Dingle, K. Y. Cheng, Applied Physics Letters SemiconductorsOxide HeterostructuresTwo-dimensional Electron GasIi-vi SemiconductorEngineering	1982	86
Possibility of infrared laser in a resonant tunneling structure A. Kastalsky, V. J. Goldman, J.H. Abeles Applied Physics Letters Categoryquantum ElectronicsQuantum PhotonicsEngineeringResonant Tunneling SuperstructureLaser Applications	1991	64
Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxy James C. M. Hwang, A. Kastalsky, H. L. Störmer, Applied Physics Letters Wide-bandgap SemiconductorSi DopantEngineeringSemiconductorsTransport Properties	1984	63

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