Applied Physics Letters · 1985 · 196 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesQuantum TunnelingSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCarrier Tunneling Across InterfacesDifferential ResistanceQuantum Tunneling EffectsResonant TunnelingTunnel DiodesTunneling DiodesTunneling In SemiconductorsTunneling Phenomena
This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs-AlxGa1−xAs -GaAs-AlxGa1−x As-GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.
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Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
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T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald et al. · Applied Physics Letters · 1983 · 1.1K citations · Full text
Alloyed ohmic contacts to GaAs
N. Braslau · Journal of Vacuum Science and Technology · 1981 · 237 citations