W. Kopp

Resonant tunneling oscillations in a GaAs-Al<i>x</i>Ga1−<i>x</i>As heterostructure at room temperature

T. J. Shewchuk, Peter Chapin, Paul D. Coleman et al. · Applied Physics Letters · 1985 · 196 citations

Semiconductors, Room Temperature, Electrical Engineering +12

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

A. Ketterson, W. T. Masselink, J.S. Gedymin et al. · IEEE Transactions on Electron Devices · 1986 · 134 citations

High-performance Pseudomorphic, Xml Library, Electrical Engineering +7

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

R. Fischer, Navin Chand, W. Kopp et al. · Applied Physics Letters · 1985 · 122 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

R. Fischer, John F. Klem, T. J. Drummond et al. · Journal of Applied Physics · 1983 · 117 citations

Materials Science, Aluminium Nitride, Electrical Engineering +13

On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

R. Fischer, T. J. Drummond, John F. Klem et al. · IEEE Transactions on Electron Devices · 1984 · 111 citations

Semiconductors, Modulation-doped Fet, Electrical Engineering +14