A. Ketterson

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

A. Ketterson, W. T. Masselink, J.S. Gedymin et al. · IEEE Transactions on Electron Devices · 1986 · 134 citations

High-performance Pseudomorphic, Xml Library, Electrical Engineering +7

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Dong Seup Lee, Han Wang, Allen Hsu et al. · IEEE Electron Device Letters · 2013 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz

Michael L. Schuette, A. Ketterson, Bo Song et al. · IEEE Electron Device Letters · 2013 · 106 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

A. Ketterson, Michael J. Moloney, W. T. Masselink et al. · IEEE Electron Device Letters · 1985 · 101 citations

Electrical Engineering, Engineering, Modern Algebra +6