A. Ketterson - Concepedia

Author

A. Ketterson

University of Illinois Urbana-Champaign ORCID

Also Known As

A. A. Ketterson, A. Ketterson, A.A. Ketterson, Andrew Ketterson, Ketterson, Andrew Arthur; Gu, Xing; Cui, Yongjie; Chen, Xing

103

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign University of Notre Dame Texas Instruments (United States)RTX (United States)Qorvo (United States)

About

A. Ketterson is an author at University of Illinois Urbana-Champaign specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	44	1.7K
2	Electrical Engineering	25	44	1.7K
3	Applied Physics	23	34	1.5K
4	Computer Engineering	2	2	25
5	Chemical Engineering	1	1	35

A. Ketterson

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors A. Ketterson, W. T. Masselink, J.S. Gedymin, IEEE Transactions on Electron Devices High-performance PseudomorphicXml LibraryElectrical EngineeringXml TransformationEngineering	1986	134
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$ Jia Guo, Guowang Li, Faiza Faria, IEEE Electron Device Letters Wide-bandgap SemiconductorMbe-regrown OhmicsElectrical EngineeringSemiconductor TechnologyEngineering	2012	133
Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ Dong Seup Lee, Han Wang, Allen Hsu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineering\Rm TGan Hemts	2013	114
Gate-recessed integrated E/D GaN HEMT technology with f<sub>T</sub>/f<sub>max</sub> >300 GHz Michael L. Schuette, A. Ketterson, Bo Song, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringD-mode Devices	2013	106
High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors A. Ketterson, Michael J. Moloney, W. T. Masselink, IEEE Electron Device Letters Electrical EngineeringEngineeringModern AlgebraElectronic EngineeringApplied Physics	1985	101
Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of <i>p</i>+-GaAs-(Al,Ga)As-<i>p</i>−-GaAs capacitors D. Arnold, A. Ketterson, T. Henderson, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1984	69
A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETs Meiping Tong, D. G. Ballegeer, A. Ketterson, Journal of Electronic Materials Materials EngineeringElectrical EngineeringEngineeringApplied PhysicsComparative Study	1992	69
Electrical characterization of GaAs/AlGaAs semiconductor-insulator-semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band-gap discontinuity D. Arnold, A. Ketterson, T. Henderson, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	1985	67
Microwave performance of InAlAs/InGaAs/InP MODFET's C. K. Peng, M.I. Aksun, A. Ketterson, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorMicrowave Performance	1987	53
InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications P. Saunier, Michael L. Schuette, Tso-Min Chou, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringV BiasV Drain BiasSemiconductor Device	2013	52

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