Masaru Sato

60 and 77GHz Power Amplifiers in Standard 90nm CMOS

Toshihide Suzuki, Yoichi Kawano, Masaru Sato et al. · 2008 · 86 citations

Engineering, Electrical Engineering, Analog Electronics +16

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura et al. · IEEE Electron Device Letters · 2018 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama et al. · IEEE Transactions on Electron Devices · 2016 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki et al. · 2016 · 62 citations

Engineering, Electrical Engineering, Microelectronics +16

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto et al. · Japanese Journal of Applied Physics · 2019 · 53 citations

Engineering, Electrical Engineering, Materials Science +17