Huiling Shang

Germanium channel MOSFETs: Opportunities and challenges

Huiling Shang, Martin M. Frank, E. P. Gusev et al. · IBM Journal of Research and Development · 2006 · 186 citations

Engineering, Electrical Engineering, Materials Science +17

Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Huiling Shang, K.-L. Lee, P. Kozlowski et al. · IEEE Electron Device Letters · 2004 · 171 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characterization of germanium p-channel MOSFETs

Huiling Shang, H. Okorn-Schimdt, J. A. Ott et al. · IEEE Electron Device Letters · 2003 · 170 citations

Engineering, Electrical Engineering, Materials Science +15

High performance 14nm SOI FinFET CMOS technology with 0.0174µm ² embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 129 citations

Engineering, Computer Engineering, Electrical Engineering +9

Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge

Jindi Chen, N.A. Bojarczuk, Huiling Shang et al. · IEEE Transactions on Electron Devices · 2004 · 128 citations

Engineering, Electrical Engineering, Materials Science +16