IEEE Electron Device Letters · 2004 · 171 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyLeakage Power ReductionMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesGate Dielectric EngineeringGate DielectricsGate Leakage CurrentGate Oxide InterfacesGate Oxide LeakageGermanium Device MaterialsJunction Leakage CurrentLeakage
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of /spl sim/10/sup 4/.
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High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
Huiling Shang, H. Schmidt, K. Chan et al. · 2003 · 120 citations