C. D’Emic

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

E. P. Gusev, C. Cabral, M. Copel et al. · Microelectronic Engineering · 2003 · 309 citations

Engineering, Materials Engineering, Materials Science +15

Ultrathin high-K gate stacks for advanced CMOS devices

E. P. Gusev, D. A. Buchanan, E. Cartier et al. · 2002 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Huiling Shang, K.-L. Lee, P. Kozlowski et al. · IEEE Electron Device Letters · 2004 · 171 citations

Engineering, Electrical Engineering, Materials Science +17

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +16

Triple-self-aligned, planar double-gate MOSFETs: devices and circuits

K.W. Guarini, P. M. Solomon, Y. Zhang et al. · 2002 · 68 citations

Engineering, Electrical Engineering, Materials Science +17