C. Cabral

Statistics

Publications

103

Citations

5.8K

H-Index

Active since

1992

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

IBM (United States)

IBM Research - Almaden

Carnegie Mellon University

Boston University

C. Cabral is an author at IBM Research - Thomas J. Watson Research Center specializing in materials science, materials engineering, and natural sciences.

ORCID

Publications per year

1992–2021

103

Publications

103

Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

Karen Holloway, P. M. Fryer, C. Cabral et al. · Journal of Applied Physics · 1992 · 448 citations

Engineering, Materials Engineering, Materials Science +17

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie, F. M. d’Heurle, Christophe Detavernier et al. · Microelectronic Engineering · 2003 · 406 citations

Engineering, Electrical Engineering, Materials Engineering +12

Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

J. M. E. Harper, C. Cabral, P. C. Andricacos et al. · Journal of Applied Physics · 1999 · 359 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

E. P. Gusev, C. Cabral, M. Copel et al. · Microelectronic Engineering · 2003 · 309 citations

Engineering, Materials Engineering, Materials Science +15

A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

Sufi Zafar, Y. Kim, Vijay Narayanan et al. · 2006 · 201 citations

Engineering, Electrical Engineering, Materials Science +17

1–5 of 103