P. Kozlowski

Ultrathin high-K gate stacks for advanced CMOS devices

E. P. Gusev, D. A. Buchanan, E. Cartier et al. · 2002 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Huiling Shang, K.-L. Lee, P. Kozlowski et al. · IEEE Electron Device Letters · 2004 · 171 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characterization of germanium p-channel MOSFETs

Huiling Shang, H. Okorn-Schimdt, J. A. Ott et al. · IEEE Electron Device Letters · 2003 · 170 citations

Engineering, Electrical Engineering, Materials Science +15

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics

Min Yang, E. P. Gusev, M. Ieong et al. · IEEE Electron Device Letters · 2003 · 166 citations

Engineering, Electrical Engineering, Materials Science +17

High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

Huiling Shang, H. Schmidt, K. Chan et al. · 2003 · 120 citations

Engineering, Electrical Engineering, Materials Science +16