I. Babich

Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Huiling Shang, K.-L. Lee, P. Kozlowski et al. · IEEE Electron Device Letters · 2004 · 170 citations

Electrical Engineering, Engineering, Physics +9

Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi et al. · 2004 · 156 citations

Materials Engineering, Ultra-thin Strained Si, Electrical Engineering +12

Process integration of self-assembled polymer templates into silicon nanofabrication

K.W. Guarini, Charles T. Black, Y. Zhang et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 136 citations

Engineering, Nanostructured Polymer, Quantum Dot Arrays +17

High-Capacity, Self-Assembled Metal–Oxide–Semiconductor Decoupling Capacitors

Charles T. Black, K.W. Guarini, Y. Zhang et al. · IEEE Electron Device Letters · 2004 · 98 citations

Materials Science, Electrical Engineering, Wafer Scale Processing +13

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Dense Circuit Layouts, Electrical Engineering, Physical Design (Electronics) +11