Koji Kita

Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

Tomonori Nishimura, Koji Kita, Akira Toriumi · Applied Physics Letters · 2007 · 479 citations

Engineering, Interconnect (Integrated Circuits), Semiconductor Device +18

Origin of electric dipoles formed at high-k/SiO2 interface

Koji Kita, Akira Toriumi · Applied Physics Letters · 2009 · 331 citations

Dipole Formation, Electrical Engineering, Engineering +13

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

Tomonori Nishimura, Koji Kita, Akira Toriumi · Applied Physics Express · 2008 · 217 citations

Engineering, Impurity Doping, Semiconductor Device +22

Electrical transport properties of graphene on SiO2 with specific surface structures

Kosuke Nagashio, Tadahiro Yamashita, Tomonori Nishimura et al. · Journal of Applied Physics · 2011 · 205 citations · Full text

Materials Science, Graphene Nanomeshes, Electrical Engineering +15

Direct Evidence of GeO Volatilization from GeO₂/Ge and Impact of Its Suppression on GeO₂/Ge Metal–Insulator–Semiconductor Characteristics

Koji Kita, Sho Suzuki, Hideyuki Nomura et al. · Japanese Journal of Applied Physics · 2008 · 197 citations

Geophysics, Materials Science, Electrical Engineering +14