Metal Gates

Metal Gates is a transistor gate electrode structure in complementary metal-oxide-semiconductor technology that employs a metal material, distinguished from traditional polysilicon gates by its enhanced electrical conductivity and reduced gate depletion effects, enabling improved device performance and scalability in advanced semiconductor devices.

707

Publications

27.8K

Citations

4.1K

Authors

442

Institutions

Publications per year

2017–2026

88

Authors

4.1K

  1. VN
    Vijay Narayanan

    IBM (United States), United States

    25 publications · 1.1K citations

    16

    h-index

  2. TS
    T. Schram

    IMEC, Belgium

    26 publications · 930 citations

    15

    h-index

  3. GG
    G. Groeseneken

    IMEC, Belgium

    16 publications · 595 citations

    15

    h-index

  4. DK
    Dim‐Lee Kwong

    Institute of Microelectronics, Singapore

    18 publications · 672 citations

    15

    h-index

  5. PM
    P. Majhi

    Intel (United States), United States

    16 publications · 557 citations

    14

    h-index

1–5 of 4.1K

Venues

  1. IEEE Electron Device Letters

    90 publications · 3.9K citations

    34

    h-index

  2. IEEE Transactions on Electron Devices

    78 publications · 2.9K citations

    29

    h-index

  3. Applied Physics Letters

    48 publications · 1.8K citations

    27

    h-index

  4. Microelectronic Engineering

    32 publications · 969 citations

    18

    h-index

  5. Journal of Applied Physics

    19 publications · 1.1K citations

    14

    h-index

1–5