Metal Gates
Metal Gates is a transistor gate electrode structure in complementary metal-oxide-semiconductor technology that employs a metal material, distinguished from traditional polysilicon gates by its enhanced electrical conductivity and reduced gate depletion effects, enabling improved device performance and scalability in advanced semiconductor devices.
707
Publications
27.8K
Citations
4.1K
Authors
442
Institutions
Publications per year
2017–2026
88
707
1–5 of 707
4.1K
16
h-index
15
h-index
15
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15
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14
h-index
1–5 of 4.1K
442
IMEC
Leuven, Belgium
27 h-index
812 publications
27K citations
IBM (United States)
Armonk, United States
25 h-index
563 publications
20.9K citations
Intel (United States)
Santa Clara, United States
22 h-index
221 publications
67K citations
KU Leuven
Leuven, Belgium
21 h-index
128 publications
3.5K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
20 h-index
162 publications
9.7K citations
National University of Singapore
Singapore, Singapore
20 h-index
154 publications
4.8K citations
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Paris, France
19 h-index
324 publications
10.8K citations
Institute of Microelectronics
Singapore, Singapore
18 h-index
79 publications
2.2K citations
1–8 of 442
90 publications · 3.9K citations
34
h-index
78 publications · 2.9K citations
29
h-index
48 publications · 1.8K citations
27
h-index
32 publications · 969 citations
18
h-index
19 publications · 1.1K citations
14
h-index
1–5