Thomas Hoffmann

A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors

T. Ghani, M Armstrong, C. Auth et al. · 2004 · 561 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell

Scott E. Thompson, N. Anand, M Armstrong et al. · 2003 · 243 citations

Engineering, Computer Engineering, Electrical Engineering +17

Nanoimprint lithography: challenges and prospects

S. Zankovych, Thomas Hoffmann, J. Seekamp et al. · Nanotechnology · 2001 · 214 citations

Engineering, Materials Engineering, Materials Science +13

Assembly Line Balancing with a Precedence Matrix

Thomas Hoffmann · Management Science · 1963 · 191 citations

Engineering, Industrial Engineering, Operations Management +10

Nanoimprint lithography: an alternative nanofabrication approach

S. Zankovych, J. Seekamp, A. Kam et al. · Materials Science and Engineering C · 2003 · 177 citations

Engineering, Materials Engineering, Materials Science +14