K. Xiong - Concepedia

Author

K. Xiong

Also Known As

J. R. Wright, K Xiong, K. L. Xiong, K. XIONG, K. Xiong, Kangchen Xiong, Kangqi Xiong, Kefan Xiong, Kexiang Xiong, Kezhao Xiong

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

University of Cambridge Durham University The University of Texas at Dallas King Abdullah University of Science and Technology Seoul National University

About

K. Xiong is an author at University of Cambridge specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	20	1.9K
2	Applied Physics	15	15	1.7K
3	Chemistry	9	9	1.2K
4	Natural Sciences	7	7	1.1K
5	Chemical Engineering	2	2	22

K. Xiong

Publications

Citations

H-Index

Page 1

	Year	Citations
Defect energy levels in HfO2 high-dielectric-constant gate oxide K. Xiong, John Robertson, Michael C. Gibson, Applied Physics Letters EngineeringChemistrySilicon On InsulatorSemiconductor DeviceOxygen Vacancy	2005	503
Band gaps and defect levels in functional oxides John Robertson, K. Xiong, Stewart J. Clark Thin Solid Films Materials ScienceDefect LevelsEngineeringOxide ElectronicsApplied Physics	2005	180
Defect states in the high-dielectric-constant gate oxide LaAlO3 K. Xiong, John Robertson, Stewart J. Clark Applied Physics Letters EngineeringChemistryElectronic StructureOxygen VacancyDefect States	2006	158
Passivation of oxygen vacancy states in HfO2 by nitrogen K. Xiong, John Robertson, Stewart J. Clark Journal of Applied Physics EngineeringChemistryRedox BiologyBand GapSemiconductor Device	2006	154
Behavior of hydrogen in wide band gap oxides K. Xiong, John Robertson, Stewart J. Clark Journal of Applied Physics Materials ScienceOxide HeterostructuresBand Gap CorrectionInterstitial HydrogenEngineering	2007	127
Point defects in HfO2 high K gate oxide K. Xiong, John Robertson Microelectronic Engineering Point DefectsEngineeringPhysicsOxide ElectronicsBias Temperature Instability	2005	103
Band structure of functional oxides by screened exchange and the weighted density approximation John Robertson, K. Xiong, Stewart J. Clark physica status solidi (b) EngineeringChemistryElectronic StructureSemiconductorsQuantum Materials	2006	98
Oxygen vacancies in high-k oxides K. Tse, Dameng Liu, K. Xiong, Microelectronic Engineering Oxygen Reduction ReactionEngineeringOxygen VacanciesOxidation ResistanceOxide Electronics	2007	94
Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization Rahul Gupta, K. Xiong, John B. White, Journal of The Electrochemical Society	2010	71
Defect states in the high-dielectric-constant gate oxide HfSiO4 K. Xiong, Yang Du, K. Tse, Journal of Applied Physics EngineeringHafnium SilicateSilicon On InsulatorGate DielectricOxygen Vacancy	2007	71

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