Doyoung Jang

Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

Doyoung Jang, Dmitry Yakimets, Geert Eneman et al. · IEEE Transactions on Electron Devices · 2017 · 275 citations

Device Modeling, Nanowire Transistors, Electrical Engineering +13

Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

Gage Hills, M. Garcia Bardon, G. Doornbos et al. · IEEE Transactions on Nanotechnology · 2018 · 131 citations · Full text

Engineering, Vlsi Design, Energy Efficiency +19

Vertically stacked gate-all-around Si nanowire transistors: Key Process Optimizations and Ring Oscillator Demonstration

Hans Mertens, R. Ritzenthaler, V. Peña et al. · 2017 · 124 citations

Electrical Engineering, Si Nanowire, Vlsi Design +14

Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

Dmitry Yakimets, M. Garcia Bardon, Doyoung Jang et al. · 2017 · 115 citations

Low-power Electronics, Power Aware Finfet, Electrical Engineering +15

Novel forksheet device architecture as ultimate logic scaling device towards 2nm

Pieter Weckx, Julien Ryckaert, E. Dentoni Litta et al. · 2019 · 106 citations

Engineering, Vlsi Design, Computer Architecture +17