M. Garcia Bardon

Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

Doyoung Jang, Dmitry Yakimets, Geert Eneman et al. · IEEE Transactions on Electron Devices · 2017 · 288 citations

Engineering, Electrical Engineering, Microelectronics +16

Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions

M. Garcia Bardon, Herc P. Neves, Robert Puers et al. · IEEE Transactions on Electron Devices · 2010 · 249 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical GAAFETs for the Ultimate CMOS Scaling

Dmitry Yakimets, Geert Eneman, P. Schuddinck et al. · IEEE Transactions on Electron Devices · 2015 · 196 citations

Engineering, Computer Engineering, Electrical Engineering +17

Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

Gage Hills, M. Garcia Bardon, G. Doornbos et al. · IEEE Transactions on Nanotechnology · 2018 · 132 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

Dmitry Yakimets, M. Garcia Bardon, Doyoung Jang et al. · 2017 · 118 citations

Engineering, Computer Engineering, Electrical Engineering +17