Random Dopant Fluctuation is a short-channel effect in semiconductor devices characterized by statistical variations in the concentration and placement of dopant atoms within the channel region, leading to device-to-device performance variability in nanoscale transistors.
297
Publications
15.4K
Citations
941
Authors
208
Institutions
Publications per year
2017–2026
38
Variants
Rdf
Parents
Publications
297
Heavily doped semiconductors and devices
R. A. Abram, G.J. Rees, B.L.H. Wilson · Advances In Physics · 1978 · 313 citations · Full text
1–5 of 297
Authors
941
- AA
21
h-index
- YL
19
h-index
- BC
14
h-index
- AA
13
h-index
- AR
13
h-index
1–5 of 941
Institutions
208
University of Glasgow
Glasgow, United Kingdom
27 h-index
170 publications
11.9K citations
National Yang Ming Chiao Tung University
Hsinchu, Taiwan
19 h-index
72 publications
2.6K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
12 h-index
34 publications
2.5K citations
IBM (United States)
Armonk, United States
11 h-index
36 publications
2.1K citations
Gold Standard Simulations (United Kingdom)
Glasgow, United Kingdom
10 h-index
16 publications
460 citations
University of California, Berkeley
Berkeley, United States
10 h-index
25 publications
2.1K citations
Taiwan Semiconductor Manufacturing Company (Taiwan)
Hsinchu, Taiwan
10 h-index
97 publications
5K citations
The University of Tokyo
Tokyo, Japan
9 h-index
28 publications
994 citations
1–8 of 208
Venues
- IEEE Transactions on Electron Devices
62 publications · 5.5K citations
36
h-index
- IEEE Electron Device Letters
23 publications · 1.2K citations
16
h-index
- Journal of Applied Physics
11 publications · 409 citations
10
h-index
- Microelectronics Reliability
8 publications · 279 citations
8
h-index
- Solid-State Electronics
6 publications · 155 citations
6
h-index
1–5