Threshold Voltage Modeling is a computational or analytical framework within semiconductor device modeling that specifically characterizes the gate voltage threshold at which a field-effect transistor transitions into the conducting state, distinguishing itself by quantifying the onset of channel inversion under varying physical, geometric, and environmental conditions.
1.4K
Publications
62.7K
Citations
3.7K
Authors
795
Institutions
Publications per year
2017–2026
221
Parents
Publications
1.4K
1–5 of 1.4K
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3.7K
- MG
18
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- RG
15
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- GGG. Ghibaudo
Institut de Microélectronique, Electromagnétisme et Photonique, France
19 publications · 687 citations
14
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- AS
13
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- CM
13
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1–5 of 3.7K
Institutions
795
National Yang Ming Chiao Tung University
Hsinchu, Taiwan
22 h-index
78 publications
2K citations
IBM (United States)
Armonk, United States
22 h-index
80 publications
6.1K citations
IMEC
Leuven, Belgium
21 h-index
117 publications
4.6K citations
Intel (United States)
Santa Clara, United States
21 h-index
78 publications
4.1K citations
University of California, Berkeley
Berkeley, United States
19 h-index
96 publications
7.4K citations
University of Delhi
New Delhi, India
19 h-index
92 publications
4.4K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
18 h-index
64 publications
3.8K citations
Arizona State University
Tempe, United States
17 h-index
71 publications
4.3K citations
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- IEEE Transactions on Electron Devices
322 publications · 18.2K citations
73
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- IEEE Electron Device Letters
83 publications · 5.1K citations
38
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- Solid-State Electronics
78 publications · 3.6K citations
31
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- Applied Physics Letters
44 publications · 3.6K citations
26
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- Journal of Applied Physics
42 publications · 3.2K citations
26
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