VTEAM: A General Model for Voltage-Controlled Memristors

TLDR

Memristors are nonvolatile, scalable devices compatible with CMOS, used in memory, logic, and neuromorphic systems, and many experiments have shown threshold voltages essential for certain applications. This brief proposes the Voltage Threshold Adaptive Memristor (VTEAM) model to describe voltage‑controlled memristors. VTEAM extends the earlier Threshold Adaptive Memristor (TEAM) model for current‑controlled devices, retaining its simplicity, generality, and flexibility to characterize diverse voltage‑controlled memristors. VTEAM achieves high accuracy (≤1.5 % RMSE) and computational efficiency compared with existing models and experimental data across various memristive technologies.

Abstract

Memristors are novel electrical devices used for a variety of applications, including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this brief, some applications require voltage-controlled memristors to operate properly. In this brief, a Voltage ThrEshold Adaptive Memristor (VTEAM) model is proposed to describe the behavior of voltage-controlled memristors. The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors. The VTEAM model has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled memristors. The VTEAM model is accurate (below 1.5% in terms of the relative root-mean-square error) and computationally efficient as compared with existing memristor models and experimental results describing different memristive technologies.