Ludovic Goux

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 69 citations

Engineering, Materials Engineering, Materials Science +7

Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

Ludovic Goux, David Tio Castro, G.A.M. Hurkx et al. · IEEE Transactions on Electron Devices · 2009 · 47 citations

Engineering, Electrical Engineering, Materials Engineering +15

Engineering of Hf<inf>1−x</inf>Al<inf>x</inf>O<inf>y</inf> amorphous dielectrics for high-performance RRAM applications

A. Fantini, Ludovic Goux, Sergiu Clima et al. · 2014 · 20 citations

Natural Sciences, Electrical Engineering, Materials Science +10

Transient Characteristics of the Reset Programming of a Phase-Change Line Cell and the Effect of the Reset Parameters on the Obtained State

Ludovic Goux, Thomas Gille, David Tio Castro et al. · IEEE Transactions on Electron Devices · 2009 · 12 citations

Engineering, Electrical Engineering, Materials Science +17