Dirk J. Wouters

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 603 citations

Non-volatile Memory, Resistive Ram, Engineering +17

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

Yang Yin Chen, Ludovic Goux, Sergiu Clima et al. · IEEE Transactions on Electron Devices · 2013 · 250 citations

Materials Science, Endurance/retention Performance, Electrical Engineering +11

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl, Karl Opsomer, M. Popovici et al. · Microelectronic Engineering · 2009 · 246 citations

Electrical Engineering, Semiconductor Device, Engineering +7

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

Sergiu Clima, Dirk J. Wouters, Christoph Adelmann et al. · Applied Physics Letters · 2014 · 228 citations

Engineering, Orthorhombic Hfo2, Chemistry +18

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

L. Goux, J. G. Lisoni, M. Jurczak et al. · Journal of Applied Physics · 2010 · 191 citations

Materials Science, Electrical Engineering, Engineering +13