J. G. Lisoni - Concepedia

Author

J. G. Lisoni

Also Known As

J. G. LISONI, J. G. Lisoni, J. Lisoni, J.G Lisoni, J.G. Lisoni, Judit G Lisoni, Judit G. Lisoni, Judit Gloria Lisoni, Judit Lisoni, Judit. G. Lisoni

125

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

IMEC KU Leuven University of Chile Austral University of Chile Centre National de la Recherche Scientifique

About

J. G. Lisoni is an author at IMEC specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	51	1.5K
2	Applied Physics	20	38	1.2K
3	Chemical Engineering	4	4	187
4	Biomedical Engineering	3	3	52
5	Medicine	2	2	25

J. G. Lisoni

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers L. Goux, J. G. Lisoni, M. Jurczak, Journal of Applied Physics Materials ScienceElectrical EngineeringEngineeringNanoelectronicsEmerging Memory Technology	2010	191
Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells Ludovic Goux, J. G. Lisoni, Xinpeng Wang, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringTin Top ElectrodesPower CellInterconnect (Integrated Circuits)	2009	88
Metal gate work function tuning by Al incorporation in TiN Lucas Petersen Barbosa Lima, H.F.W. Dekkers, J. G. Lisoni, Journal of Applied Physics Aluminium NitrideEngineeringTitanium AluminumAnodizingChemical Engineering	2014	78
Surface roughness and surface-induced resistivity of gold films on mica: Application of quantitative scanning tunneling microscopy Raúl C. Muñoz, Guillermo Vidal‐de‐Miguel, Marcelo Mulsow, Physical review. B, Condensed matter	2000	66
Intrinsic electron traps in atomic-layer deposited HfO2 insulators Florin Cerbu, Oreste Madia, D. V. Andreev, Applied Physics Letters EngineeringHfo2 LayersCharge TransportSemiconductorsHfo2 Films	2016	57
Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells David Tio Castro, L. Goux, G.A.M. Hurkx, EngineeringPhase Change MemoryRefrigerationNanoelectronicsThermodynamics	2007	54
Synthesis of Ferroelectric Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> by Alternative Routes: Wet No-Coprecipitation Chemistry and Mechanochemical Activation J. G. Lisoni, P. Millán, E. Vila, Chemistry of Materials Magnetic PropertiesMechanochemical ActivationEngineeringFunctional CeramicChemistry	2001	54
Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients L. Pantisano, T. Schram, Z. Li, Applied Physics Letters Materials ScienceOxide HeterostructuresEngineeringRuox FormationSurface Electrochemistry	2006	48
Tall triple-gate devices with TiN/HfO/sub 2/ gate stack Nadine Collaert, M. Demand, Isabelle Ferain, Mocvd TinElectrical Engineering3D Ic ArchitectureEngineeringTriple Gate Devices	2005	48
Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell Ludovic Goux, David Tio Castro, G.A.M. Hurkx, IEEE Transactions on Electron Devices Endurance LifetimeElectrical EngineeringEngineeringEndurance TestingPhase-change Line Cell	2009	47

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