H.F.W. Dekkers

Metal gate work function tuning by Al incorporation in TiN

Lucas Petersen Barbosa Lima, H.F.W. Dekkers, J. G. Lisoni et al. · Journal of Applied Physics · 2014 · 81 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Understanding and modelling the PBTI reliability of thin-film IGZO transistors

Adrian Chasin, J. Franco, K. Triantopoulos et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 72 citations

Engineering, Electrical Engineering, Physics +17

Molecular hydrogen formation in hydrogenated silicon nitride

H.F.W. Dekkers, G. Beaucarne, M. Hiller et al. · Applied Physics Letters · 2006 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17

Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers

H.F.W. Dekkers, L. Carnel, G. Beaucarne · Applied Physics Letters · 2006 · 63 citations

Engineering, Materials Engineering, Materials Science +17

Origin of visible luminescence in hydrogenated amorphous silicon nitride

H L Hao, Lingling Wu, Wenzhong Shen et al. · Applied Physics Letters · 2007 · 62 citations

Engineering, Materials Engineering, Materials Science +17