A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

MOS (Metal Oxide Semiconductor) Physics and Technology

K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

Engineering, Chemical Engineering, Nuclear Engineering +12

Theory of light absorption and non-radiative transitions in <i>F</i> -centres

Kun Huang, Avril Rhys · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · 1950 · 1.6K citations

Natural Sciences, Physics, Molecular Physics +13

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/<i>ƒ</i>) noise

M. J. Kirton, Michael J. Uren · Advances In Physics · 1989 · 1.3K citations

Natural Sciences, Materials Science, Physics +17

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

C. H. Henry, D. V. Lang · Physical review. B, Solid state · 1977 · 1.2K citations

Natural Sciences, Materials Science, Physics +16

A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

K. Mistry, R. Chau, Changhwan Choi et al. · 2007 · 829 citations

Engineering, Computer Engineering, Electrical Engineering +17