E. Bury

Self-heating on bulk FinFET from 14nm down to 7nm node

Doyoung Jang, E. Bury, R. Ritzenthaler et al. · 2015 · 92 citations

Device Modeling, Scaled Bulk Finfets, Electrical Engineering +14

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS

Kai-Hsin Chuang, E. Bury, R. Degraeve et al. · IEEE Journal of Solid-State Circuits · 2019 · 74 citations · Full text

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Ben Kaczer, J. Franco, Pieter Weckx et al. · Microelectronics Reliability · 2018 · 65 citations

Circuit Time-dependent Variability, Electrical Engineering, Engineering +9

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Alexander Grill, E. Bury, Jakob Michl et al. · 2020 · 56 citations

Engineering, Semiconductor Device, Advanced Cmos +20

Experimental validation of self-heating simulations and projections for transistors in deeply scaled nodes

E. Bury, B. Kaczer, Philippe Roussel et al. · 2014 · 46 citations

Engineering, Experimental Validation, Cmos Device Improvements +22