Marko Simicic

Comphy — A compact-physics framework for unified modeling of BTI

G. Rzepa, J. Franco, Barry O’Sullivan et al. · Microelectronics Reliability · 2018 · 210 citations

Natural Sciences, Physics, Nuclear Physics +5

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Ben Kaczer, J. Franco, Pieter Weckx et al. · Microelectronics Reliability · 2018 · 66 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations

Marko Simicic, Pieter Weckx, Bertrand Parvais et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2018 · 26 citations

Engineering, Computer Engineering, Electrical Engineering +17

Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology

Geert Hellings, Hans Mertens, A. Subirats et al. · 2018 · 24 citations

Engineering, Electrical Engineering, Materials Science +16

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

B. Kaczer, J. Franco, Pieter Weckx et al. · Solid-State Electronics · 2016 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +16