Yannick Wimmer

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed et al. · Microelectronics Reliability · 2018 · 131 citations

Semiconductor Devices, Electrical Engineering, Rate Equations +12

On the microscopic structure of hole traps in pMOSFETs

Tibor Grasser, Wolfgang Goes, Yannick Wimmer et al. · 2014 · 97 citations

Engineering, Hole Traps, Defect Tolerance +17

Theoretical models of hydrogen-induced defects in amorphous silicon dioxide

Al-Moatasem El-Sayed, Yannick Wimmer, Wolfgang Goes et al. · Physical Review B · 2015 · 92 citations

Engineering, Computational Chemistry, Chemistry +17

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

M. Bina, Stanislav Tyaginov, J. Franco et al. · IEEE Transactions on Electron Devices · 2014 · 81 citations · Full text

Engineering, Power Electronics, Hcd Model +17

Role of hydrogen in volatile behaviour of defects in SiO₂-based electronic devices

Yannick Wimmer, Al-Moatasem El-Sayed, Wolfgang Gös et al. · Proceedings of the Royal Society A Mathematical Physical and Engineering Sciences · 2016 · 59 citations · Full text