Stanislav Tyaginov

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

M. Bina, Stanislav Tyaginov, J. Franco et al. · IEEE Transactions on Electron Devices · 2014 · 81 citations · Full text

Engineering, Power Electronics, Hcd Model +17

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

Stanislav Tyaginov, Markus Jech, J. Franco et al. · IEEE Electron Device Letters · 2015 · 76 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +14

Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

Gregor Pobegen, Stanislav Tyaginov, Michael Nelhiebel et al. · IEEE Electron Device Letters · 2013 · 61 citations

Materials Engineering, Electrical Engineering, Hot-carrier Degradation +14

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

M. I. Vexler, Stanislav Tyaginov, A. F. Shulekin · Journal of Physics Condensed Matter · 2005 · 57 citations

Semiconductor Technology, Sio2 Film, Electrical Engineering +13

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl et al. · Microelectronics Reliability · 2010 · 57 citations

Device Modeling, Engineering, Physics +10