O. Triebl

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl et al. · Microelectronics Reliability · 2010 · 57 citations

Device Modeling, Engineering, Physics +10

Physical modeling of hot-carrier degradation for short- and long-channel MOSFETs

Stanislav Tyaginov, M. Bina, J. Franco et al. · 2014 · 49 citations

Engineering, Power Electronics, Charge Transport +18

Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl et al. · 2011 · 34 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +12

Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation

M. Bina, Karl Rupp, Stanislav Tyaginov et al. · 2012 · 31 citations

Engineering, Hot Carrier Degradation, Computational Chemistry +19

Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

Ph. Hehenberger, Th. Aichinger, Tibor Grasser et al. · 2009 · 29 citations

Engineering, Fast Initial Degradation, Power Electronics +17