Markus Jech

Comphy — A compact-physics framework for unified modeling of BTI

G. Rzepa, J. Franco, Barry O’Sullivan et al. · Microelectronics Reliability · 2018 · 196 citations

Engineering, Physics, Numerical Simulation +5

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed et al. · Microelectronics Reliability · 2018 · 131 citations

Semiconductor Devices, Electrical Engineering, Rate Equations +12

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

Stanislav Tyaginov, Markus Jech, J. Franco et al. · IEEE Electron Device Letters · 2015 · 76 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +14

Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology

Alexander Makarov, Stanislav Tyaginov, B. Kaczer et al. · 2017 · 34 citations

Engineering, Device Topology, Physical Design (Electronics) +16

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part II: Theory

Markus Jech, Bianka Ullmann, G. Rzepa et al. · IEEE Transactions on Electron Devices · 2018 · 34 citations · Full text

Engineering, Mosfet Device, Semiconductor Device +17