Dominic Waldhoer

Toward Automated Defect Extraction From Bias Temperature Instability Measurements

Dominic Waldhoer, Christian Schleich, Jakob Michl et al. · IEEE Transactions on Electron Devices · 2021 · 37 citations

Engineering, Measurement, Education +23

Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture

Christoph Wilhelmer, Dominic Waldhoer, Markus Jech et al. · Microelectronics Reliability · 2022 · 34 citations · Full text

Point Defects, Engineering, Ab Initio Investigations +22

Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies

Christian Schleich, Dominic Waldhoer, Katja Waschneck et al. · IEEE Transactions on Electron Devices · 2021 · 33 citations

Semiconductors, Defect Tolerance, Electrical Engineering +15

Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Dominic Waldhoer, Christian Schleich, Jakob Michl et al. · Microelectronics Reliability · 2023 · 29 citations · Full text

An ab initio study on resistance switching in hexagonal boron nitride

Fabian Ducry, Dominic Waldhoer, Theresia Knobloch et al. · npj 2D Materials and Applications · 2022 · 26 citations · Full text