2006 · 273 citations · 11 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice ModelingSemiconductor ReliabilityShort-channel EffectsDiffusion TheoryReaction-diffusion CouplingReaction-diffusion EquationsReaction-diffusion PhenomenaReliability DegradationReliability Degradation MechanismsSlopesVoltage
We present a new direct V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> measurement technique with arbitrary choice of drain voltage and a mus delay (factor of 1000 improvement) after stress. As shown this technique enables a meaningful comparison of data to theory (e.g. DeltaV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> measurable as response to stress times from 100mus over 10 decades in time and an analysis of recovery over 11 decades in time) which may lead to a better understanding of NBTI. A fast precursor due to bulk trapping was found to significantly influence degradation slopes for all times. Based on a physical model - standard reaction/diffusion model plus fast bulk trapping -with just 3 fit parameters experimental degradation can be well modelled and degradation slopes <frac14 as well as > frac14 (both reported in literature) can be explained. A lifetime extrapolation based on this physical model is superior to the common straight line fit. There is no satisfying agreement of recovery data with reaction/diffusion theory. Further experimental and theoretical work is going to be needed
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On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's
M. Denais, A. Bravaix, V. Huard et al. · 2005 · 235 citations
Engineering, Electrical Engineering, Electronic Materials +16