Jonathan Anderson

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

Luke Yates, Jonathan Anderson, Xing Gu et al. · ACS Applied Materials & Interfaces · 2018 · 152 citations

Properties of ZnS thin films prepared by 248-nm pulsed laser deposition

Michael H. McLaughlin, H. F. Sakeek, Paul Maguire et al. · Applied Physics Letters · 1993 · 60 citations

Engineering, Luminescent Glass, Laser Deposition +16

Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiN<i>x</i> Interlayer Grown by MOCVD

Anwar Siddique, Raju Ahmed, Jonathan Anderson et al. · ACS Applied Electronic Materials · 2019 · 50 citations

Materials Engineering, Materials Science, Electrical Engineering +14

PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures

Iman Rezanezhad Gatabi, Derek W. Johnson, Jung Hwan Woo et al. · IEEE Transactions on Electron Devices · 2013 · 39 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer

B. L. Hancock, Mohammad Nazari, Jonathan Anderson et al. · Applied Physics Letters · 2016 · 34 citations

Materials Science, Wide-bandgap Semiconductor, Diamond-like Carbon +11