Concepedia

Nitride Passivation

Nitride Passivation is a surface passivation technique that involves the application of a nitride-based dielectric layer to semiconductor surfaces to reduce interface defect states and minimize surface recombination, thereby enhancing electronic device performance and stability.

835

Publications

32.1K

Citations

3.8K

Authors

845

Institutions

Publications per year

2017–2026

140

Parents

Publications

835

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature · 2000 · 1.7K citations

, , +15

Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

Frank Feldmann, Martin Bivour, Christian Reichel et al. · Solar Energy Materials and Solar Cells · 2013 · 732 citations

, , +17

Progress and prospects of group-III nitride semiconductors

S. Noor Mohammad, H. Morkoç̌ · Progress in Quantum Electronics · 1996 · 500 citations

, , +12

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka et al. · Nature · 2012 · 429 citations

, , +17

High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition

Matthew S. Wong, David Hwang, Abdullah I. Alhassan et al. · Optics Express · 2018 · 344 citations · Full text

, , +17

1–5 of 835

Authors

3.8K

  1. SJ
    S. J. Pearton

    University of Florida, United States

    12 publications · 354 citations

    11

    h-index

  2. FR
    F. Ren

    University of Florida, United States

    10 publications · 327 citations

    10

    h-index

  3. CR
    C. R. Abernathy

    University of Florida, United States

    9 publications · 304 citations

    9

    h-index

  4. MW
    Maojun Wang

    Peking University, China

    7 publications · 230 citations

    7

    h-index

  5. TP
    Tomás Palacios

    Massachusetts Institute of Technology, United States

    7 publications · 321 citations

    7

    h-index

1–5 of 3.8K

Institutions

845

  1. Centre National de la Recherche Scientifique

    Paris, France

    16 h-index

    104 publications

    3.8K citations

  2. Chinese Academy of Sciences

    Beijing, China

    15 h-index

    128 publications

    3.3K citations

  3. Massachusetts Institute of Technology

    Cambridge, United States

    12 h-index

    39 publications

    1.7K citations

  4. Nanyang Technological University

    Singapore, Singapore

    12 h-index

    45 publications

    897 citations

  5. National University of Singapore

    Singapore, Singapore

    12 h-index

    61 publications

    1.4K citations

  6. IMEC

    Leuven, Belgium

    12 h-index

    94 publications

    2.9K citations

  7. University of California, Santa Barbara

    Santa Barbara, United States

    11 h-index

    57 publications

    4.5K citations

  8. Institute of Microelectronics

    Beijing, China

    11 h-index

    66 publications

    2.1K citations

1–8 of 845

Venues

  1. Journal of Crystal Growth

    54 publications · 1.8K citations

    27

    h-index

  2. Applied Physics Letters

    45 publications · 1.6K citations

    27

    h-index

  3. Applied Surface Science

    53 publications · 1.8K citations

    26

    h-index

  4. Solid-State Electronics

    45 publications · 1.4K citations

    23

    h-index

  5. IEEE Electron Device Letters

    32 publications · 1.7K citations

    22

    h-index

1–5