Tetsuya Akasaka

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka et al. · Nature · 2012 · 419 citations

Materials Science, Layered Boron, Electrical Engineering +7

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Tetsuya Akasaka, Hideki Gotoh, Tadashi Saito et al. · Applied Physics Letters · 2004 · 132 citations · Full text

Photonics, Electrical Engineering, High Luminescent Efficiency +14

Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE

Yasuyuki Kobayashi, Tetsuya Akasaka · Journal of Crystal Growth · 2008 · 116 citations

Materials Engineering, Materials Science, Engineering +5

Cavity Polaritons in InGaN Microcavities at Room Temperature

Takehiko Tawara, Hideki Gotoh, Tetsuya Akasaka et al. · Physical Review Letters · 2004 · 85 citations

Photonics, Quantum Science, Quantum Photonics +12

Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

Takehiko Tawara, Hideki Gotoh, Tetsuya Akasaka et al. · Applied Physics Letters · 2003 · 75 citations

Optical Materials, Engineering, Dry Etching Technique +16