Applied Physics Letters · 2000 · 105 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsDislocation DensityElectron MobilityGate LeakageHeterostructure DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsHeterostructuresSelf-heating Effects
We report on AlGaN/GaN heterostructures and heterostructure field-effect transistors (HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2d electron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm2/V s combined with a very large electron sheet density ns≈1.4×1013 cm−2. The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs (nsμ>2×1016 V−1 s−1) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in the high-power regime, the self-heating effects, and not a dislocation density, is the dominant factor determining the device behavior.
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AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 383 citations
Self-heating in high-power AlGaN-GaN HFETs
R. Gaška, A. Osinsky, J. Yang et al. · IEEE Electron Device Letters · 1998 · 298 citations