Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

S. Golka, Christian Pflügl, W. Schrenk, +5

Applied Physics Letters

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringCatastrophic BreakdownDouble-barrier Gan +13

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz, +8

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringBulk GanLaser StructuresNanoelectronics +14

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

C. Skierbiszewski, Henryk Turski, G. Muzioł, +5

Journal of Physics D Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices +16

High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

C. Skierbiszewski, K. Dybko, W. Knap, +9

Applied Physics Letters

Materials ScienceRoom TemperatureWide-bandgap SemiconductorEngineeringPhysics +11

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Henryk Turski, M. Siekacz, Z. R. Wasilewski, +3

Journal of Crystal Growth

EngineeringPhysicsNitrogen AtomsCrystal Growth TechnologySurface Science +8

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

L. Lymperakis, Tobias Schulz, Christoph Freysoldt, +9

Physical Review Materials

EngineeringMechanical EngineeringChemical OrderQuantum MaterialsNew Mechanism +18

60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, P. Wiśniewski, M. Siekacz, +6

Applied Physics Letters

Ingan LdsEngineeringLaser-plasma InteractionIngan Laser DiodesHigh-power Lasers +16

Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices

Henryk Turski, M. Siekacz, Krzesimir Nowakowski-Szkudlarek, +6

ACS Photonics

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

M. Siekacz, Marta Sawicka, Henryk Turski, +13

Journal of Applied Physics

EngineeringLaser MaterialSemiconductor LasersOptical PropertiesMolecular Beam Epitaxy +15

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

C. Skierbiszewski, P. Perlin, I. Grzegory, +9

Semiconductor Science and Technology

EngineeringLaser ApplicationsLaser MaterialBulk GanOptoelectronic Devices +15