M. Siekacz

Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

S. Golka, Christian Pflügl, W. Schrenk et al. · Applied Physics Letters · 2006 · 107 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz et al. · Applied Physics Letters · 2004 · 69 citations

Wide-bandgap Semiconductor, Engineering, Bulk Gan +16

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

C. Skierbiszewski, Henryk Turski, G. Muzioł et al. · Journal of Physics D Applied Physics · 2014 · 68 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

C. Skierbiszewski, K. Dybko, W. Knap et al. · Applied Physics Letters · 2005 · 64 citations

Materials Science, Room Temperature, Wide-bandgap Semiconductor +13

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Henryk Turski, M. Siekacz, Z. R. Wasilewski et al. · Journal of Crystal Growth · 2013 · 52 citations

Engineering, Physics, Nitrogen Atoms +10