Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Applied Physics Letters

Metal Powder Report · 1994 · 2K citations

Engineering, Materials Engineering, Materials Science +17

The Blue Laser Diode. The Complete Story

Stephen Pearton and Fasol Shuji Nakamura · Measurement Science and Technology · 2001 · 545 citations

Natural Sciences, Materials Science, Physics +15

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

J. Karpiński, J. Jun, S. Porowski · Journal of Crystal Growth · 1984 · 388 citations

Engineering, Materials Engineering, Materials Science +12

Adatom Kinetics On and Below the Surface: The Existence of a New Diffusion Channel

Jörg Neugebauer, Tosja Zywietz, Matthias Scheffler et al. · Physical Review Letters · 2003 · 329 citations

Natural Sciences, Materials Engineering, Materials Science +17

Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

O. Ambacher, M. Brandt, R. Dimitrov et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 283 citations

Natural Sciences, Materials Engineering, Materials Science +17