Publication | Closed Access
Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers
52
Citations
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References
2013
Year
EngineeringPhysicsNitrogen AtomsCrystal Growth TechnologySurface ScienceCondensed Matter PhysicsQuantum MaterialsApplied PhysicsAtomic PhysicsSolid-state ChemistryMolecular Beam EpitaxyEpitaxial GrowthIngan Layers
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