Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications

Agnieszka Kamińska, Igor Dzięcielewski, J.L. Weyher, +8

Journal of Materials Chemistry

EngineeringSurface-enhanced Raman ScatteringSurface NanotechnologyBiomedical EngineeringChemistry +15

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

C. Skierbiszewski, Henryk Turski, G. Muzioł, +5

Journal of Physics D Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices +16

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Henryk Turski, M. Siekacz, Z. R. Wasilewski, +3

Journal of Crystal Growth

EngineeringPhysicsNitrogen AtomsCrystal Growth TechnologySurface Science +8

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

M. Siekacz, Marta Sawicka, Henryk Turski, +13

Journal of Applied Physics

EngineeringLaser MaterialSemiconductor LasersOptical PropertiesMolecular Beam Epitaxy +15

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

C. Skierbiszewski, Krzesimir Nowakowski-Szkudlarek, Henryk Turski, +5

Applied Physics Express

Optical MaterialsEngineeringLaser ApplicationsTrue-blue Laser DiodesTunnel Junctions +16

Stack of two III-nitride laser diodes interconnected by a tunnel junction

M. Siekacz, G. Muzioł, Mateusz Hajdel, +9

Optics Express

PhotonicsElectrical EngineeringEngineeringTunneling MicroscopyPhysics +9

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

Henryk Turski, M. Siekacz, Marta Sawicka, +8

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringPhysics +11

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

M. Siekacz, Henryk Turski, Mateusz Hajdel, +7

Electronics

Wide-bandgap SemiconductorOptical MaterialsEngineeringTunnel JunctionsOptoelectronic Devices +17

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

R. Kudrawiec, M. Gładysiewicz, J. Misiewicz, +6

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringSurface Potential BarrierContactless ElectroreflectanceContactless Electroreflectance Studies +15

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

C. Skierbiszewski, M. Siekacz, Henryk Turski, +9

Applied Physics Express

Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesHigh-power Lasers +14