G. Muzioł - Concepedia

Author

G. Muzioł

Institute of High Pressure Physics ORCID

Also Known As

G Muziol, G. Muziol, G. Muziol', G. Muzioł, Greg Muziol, Grzegorz Muziol, Grzegorz Muzioł, Muziol, G., Muziol, Grzegorz

166

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Institute of High Pressure Physics TopGaN (Poland)Polish Academy of Sciences Cornell University Wrocław University of Science and Technology

About

G. Muzioł is an author at Institute of High Pressure Physics specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	21	388
2	Applied Physics	13	22	400
3	Electrical Engineering	10	11	185
4	Natural Sciences	1	1	14
5	Materials Engineering	1	1	10

G. Muzioł

Publications

486

Citations

H-Index

Page 1

	Year	Citations
Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy C. Skierbiszewski, Henryk Turski, G. Muzioł, Journal of Physics D Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices	2014	68
Stack of two III-nitride laser diodes interconnected by a tunnel junction M. Siekacz, G. Muzioł, Mateusz Hajdel, Optics Express PhotonicsElectrical EngineeringEngineeringTunneling MicroscopyPhysics	2019	35
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction Katarzyna Pieniak, Henryk Turski, Witold Trzeciakowski, Optics Express	2020	33
III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources G. Muzioł, Mateusz Hajdel, M. Siekacz, Japanese Journal of Applied Physics EngineeringPiezoelectric FieldIngan QwsOptoelectronic DevicesWide Ingan Qws	2021	23
Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy R. Kudrawiec, M. Gładysiewicz, J. Misiewicz, Applied Physics Letters Wide-bandgap SemiconductorEngineeringSurface Potential BarrierContactless ElectroreflectanceContactless Electroreflectance Studies	2013	21
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes Julia Slawinska, G. Muzioł, M. Siekacz, Optics Express	2022	21
Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells Caroline Chèze, M. Siekacz, G. Muzioł, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials SciencePhotonicsEpitaxial GrowthPhotoluminescencePoint Defects	2013	19
MBE fabrication of III-N-based laser diodes and its development to industrial system C. Skierbiszewski, M. Siekacz, Henryk Turski, Journal of Crystal Growth Materials ScienceAdvanced Laser ProcessingEngineeringApplied PhysicsLaser Processing Technology	2013	19
InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE C. Skierbiszewski, M. Siekacz, Henryk Turski, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena EngineeringLaser ScienceLaser-plasma InteractionLaser ApplicationsLaser Material	2011	18
Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy G. Muzioł, Mateusz Hajdel, Henryk Turski, Optics Express Wide-bandgap SemiconductorPhotonicsOptical PumpingEngineeringLaser Science	2020	18

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