Applied Physics Letters · 1986 · 59 citations · 6 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsElectronic Band StructureMagnetic Properties Of SolidsMagnetism In SolidsQuantum Hall PhysicsSemiconductor HeterostructuresSemiconductor PhysicsElectron DensityHall EffectHeterojunctionsSemiconductor HeterojunctionsZero-field Quantum Hall Effect
Shubnikov–de Haas and quantum Hall effects have been studied in GaInAs-InP heterojunctions grown by modified low pressure metalorganic chemical vapor deposition. In contrast to the results reported up till now on GaInAs-InP heterojunctions with nearly the same channel electron density, not one but three electric subbands, E0, E1, and E2, are occupied in zero magnetic field. Two electric subbands E0 and E1 contribute to the quantum Hall effect. Magnetic depopulation of the higher (E1 and E2) subbands is observed in both perpendicular and tilted magnetic field orientations. This enables a demonstration of the importance of intersubband scattering in resistivity and cyclotron resonance.
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Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
H. L. Störmer, Z. Schlesinger, A. M. Chang et al. · Physical Review Letters · 1983 · 339 citations