M. S. Minsky - Concepedia

Author

M. S. Minsky

University of California, Santa Barbara

Also Known As

M. Minsky, M. S. Minsky, M.S Minsky, M.S. Minsky, Milan S. Minsky, Rosner, S.J

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara Waseda University National Taiwan University Nichia Corporation (Japan)

About

M. S. Minsky is an author at University of California, Santa Barbara specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	17	1.7K
2	Applied Physics	16	17	1.7K
3	Electrical Engineering	8	8	818
4	Materials Science	3	3	350
5	Chemical Engineering	1	1	289

M. S. Minsky

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Shigefusa F. Chichibu, A. Abare, M. S. Minsky, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringPiezoelectric FieldWell Thickness	1998	450
Room-temperature photoenhanced wet etching of GaN M. S. Minsky, Mark White, Evelyn L. Hu Applied Physics Letters Materials ScienceChemical EngineeringElectronic DevicesEngineeringHecd Laser Power	1996	289
Optical properties of InGaN quantum wells Shigefusa F. Chichibu, A. Abare, M. Mack, Materials Science and Engineering B PhotonicsQuantum ScienceEngineeringPhysicsApplied Physics	1999	176
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth Shigefusa F. Chichibu, H. Marchand, M. S. Minsky, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsPhotoluminescenceEngineeringEmission Mechanisms	1999	167
Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Yong‐Hoon Cho, J. J. Song, S. Keller, Applied Physics Letters SemiconductorsLinewidth BroadeningElectrical EngineeringWide-bandgap SemiconductorEngineering	1998	98
Radiative recombination lifetime measurements of InGaN single quantum well Chi‐Kuang Sun, S. Keller, G. Wang, Applied Physics Letters EngineeringOptoelectronic DevicesLuminescence PropertySemiconductor NanostructuresSemiconductors	1996	85
Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence M. S. Minsky, S. B. Fleischer, A. Abare, Applied Physics Letters PhotonicsElectrical EngineeringRapid LifetimeEngineeringPhotoluminescence	1998	84
Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells S. Keller, Shigefusa F. Chichibu, M. S. Minsky, Journal of Crystal Growth Wide-bandgap SemiconductorEngineeringPhysicsIngan/gan Quantum WellsGrowth Rate	1998	71
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes Shigefusa F. Chichibu, Dan Cohen, M. Mack, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringOptical MaterialsThreshold Power Density	1998	68
Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature Chi‐Kuang Sun, Tzu-Yang Chiu, S. Keller, Applied Physics Letters PhotonicsRoom TemperaturePhotoluminescenceEngineeringPhysics	1997	56

Page 1