High-speed 1.3μm tunnel injection quantum-dot lasers

Abstract

1.3 μ m tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to optimize the gain. The lasers are characterized by Jth=180A∕cm2, T0=∞, dg∕dn≈1×10−14cm2, f−3dB=11GHz, chirp of 0.1Å, and zero α parameter.