Applied Physics Letters · 2005 · 156 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesOptical SourcesQuantum ConfinementQuantum DotsSemiconductor HeterostructuresSemiconductor LasersHeterostructuresMolecular Beam EpitaxyNanoscale HeterostructuresQuantum Dot LasersSemiconductor Quantum DotsTunnel Junction Lasers
1.3 μ m tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to optimize the gain. The lasers are characterized by Jth=180A∕cm2, T0=∞, dg∕dn≈1×10−14cm2, f−3dB=11GHz, chirp of 0.1Å, and zero α parameter.
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1.3 μm room-temperature GaAs-based quantum-dot laser
Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
L. F. Lester, A. Stintz, H. Li et al. · IEEE Photonics Technology Letters · 1999 · 228 citations